< IGBT MODULES >
CM1400DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TENTATIVE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V
GE
=15 V
3.5
T
j
=25 °C
2800
V
GE
=20 V
2400
13.5 V
12 V
3.0
15 V
2000
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
T
j
=125 °C
2.5
I
C
(A)
COLLECTOR CURRENT
1600
11 V
T
j
=150 °C
2.0
1200
1.5
10 V
800
T
j
=25 °C
1.0
9V
400
0.5
0
0
2
4
6
8
10
0.0
0
400
800
1200
1600
2000
2400
2800
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
10
2800
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
2400
8
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
I
C
=2800 A
I
C
=1400 A
I
E
(A)
EMITTER CURRENT
2000
6
I
C
=560 A
1600
4
1200
T
j
=150 °C
T
j
=125 °C
800
2
400
T
j
=25 °C
0
6
8
10
12
14
16
18
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
GATE-EMITTER VOLTAGE
V
GE
(V)
EMITTER-COLLECTOR VOLTAGE
V
EC
(V)
July-2012
6
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
