TENTATIVE
< IGBT MODULES >
CM1400DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I
C
.............….......................…
1 4 0 0
A
Collector-emitter voltage V
CES
......................…
1 2 0 0
V
Maximum junction temperature T
j m a x
..............
●Flat
base Type
●Copper
base plate (non-plating)
●RoHS
Directive compliant
Dual switch (Half-Bridge)
1 7 5
°C
APPLICATION
Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
C2
(Cs2)
C2E1
Tolerance otherwise specified
C1
(Cs1)
Division of Dimension
0.5
over
3
6
over
to
to
to
3
6
30
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
G2
Tr2
Di2
Di1
Tr1
E1
(Es1)
over 30
over 120
to 120
to 400
The tolerance of size between
terminals is assumed to be ±0.4.
E2
(Es2)
G1
E2
C1
July-2012
1
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
