MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
200
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
COLLECTOR CURRENT I
C
(A)
V
GE
= 20
(V)
T
j
= 25°C
15
12
V
CE
= 10V
150
11
100
10
50
9
8
0
0
2
4
6
8
10
150
100
50
T
j
= 25°C
T
j
= 125°C
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25°C
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
4
8
3
6
I
C
= 200A
I
C
= 100A
2
I
C
= 40A
2
4
1
0
0
50
100
150
200
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT I
E
(A)
5
3
2
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
7
T
j
= 25°C
V
GE
= 0V
10
1
7
5
3
2
C
ies
10
2
7
5
3
2
10
0
7
5
3
2
C
oes
C
res
10
1
1.0
1.5
2.0
2.5
3.0
3.5
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Feb. 2009
3
EMITTER-COLLECTOR VOLTAGE V
EC
(V)