MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
(Tj = 25
°
C, unless otherwise specified)
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
V
GE
= 0V
V
CE
= 0V
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C
Conditions
Ratings
1200
±20
100
200
100
200
650
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
(Note 1)
(Note 1)
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
Item
(Tj = 25
°
C, unless otherwise specified)
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 10mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
V
CC
= 600V, I
C
= 100A
V
GE
=
±15V
R
G
= 3.1Ω
Resistive load
I
E
= 100A, V
GE
= 0V
I
E
= 100A,
die / dt = –200A /
µs
Junction to case, IGBT part (Per 1/6 module)
Junction to case, FWDi part (Per 1/6 module)
Case to heat sink, conductive grease applied
(Per 1/6 module)
(Note 6)
(Note 4)
T
j
= 25°C
T
j
= 125°C
Collector cutoff current
Gate-emitter
V
GE(th)
threshold voltage
Gate-leakage current
I
GES
Collector-emitter
V
CE(sat)
saturation voltage
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer capacitance
C
res
Q
G
Total gate charge
t
d (on)
Turn-on delay time
t
r
Turn-on rise time
t
d (off)
Turn-off delay time
t
f
Turn-off fall time
V
EC(Note 2)
Emitter-collector voltage
t
rr (Note 2)
Reverse recovery time
Q
rr (Note 2)
Reverse recovery charge
R
th(j-c)Q
Thermal resistance (Note 5)
R
th(j-c)R
R
th(c-f)
Contact thermal resistance
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
6
—
2.9
2.85
—
—
—
375
—
—
—
—
—
—
0.55
—
—
0.09
Max
1
7.5
0.5
3.7
—
15
5
3
—
100
200
300
350
3.2
300
—
0.19
0.35
—
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
Note 1.
2.
3.
4.
5.
6.
Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (T
C
) measured point is shown in page OUTLINE DRAWING.
Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Feb. 2009
2
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
