MITSUBISHI IGBT MODULES
CM100DU-34KA
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
4
7
5
3
2
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
3
7
5
3
2
SWITCHING TIMES (ns)
t
f
t
d(off)
t
d(on)
Conditions:
V
CC
= 1000V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
10
3
7
5
3
2
10
2
7
5
3
2
t
rr
I
rr
Conditions:
V
CC
= 1000V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 25°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
10
2
7
5
3
2
t
r
10
1 1
10
10
1 1
10
COLLECTOR CURRENT I
C
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
EMITTER CURRENT I
E
(A)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
GATE-EMITTER VOLTAGE V
GE
(V)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
IGBT part:
5
Per unit base = R
th(j–c)
= 0.14K/ W
3
FWDi part:
2
Per unit base = R
th(j–c)
= 0.24K/ W
10
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
I
C
= 100A
16
V
CC
= 800V
12
V
CC
= 1000V
8
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–2
10
–2
Single Pulse
T
C
= 25°C
4
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
0
0
100
200
300
400
500
600
GATE CHARGE Q
G
(nC)
Feb. 2009
4
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
