MITSUBISHI IGBT MODULES
CM100DU-34KA
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise specified)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C
Conditions
Ratings
1700
±20
100
200
100
200
890
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
400
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
g
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
*1
Contact thermal resistance
Thermal resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 10mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 1000V, I
C
= 100A, V
GE
= 15V
V
CC
= 1000V, I
C
= 100A
V
GE
=
±15V
R
G
= 3.1Ω, Inductive load
I
E
= 100A
I
E
= 100A, V
GE
= 0V, T
j
= 25°C
I
E
= 100A, V
GE
= 0V, T
j
= 125°C
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied
*2
(1/2 module)
Case temperature measured point is just under the chips
T
j
= 25°C
T
j
= 125°C
Min.
—
4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
5.5
—
3.2
3.8
—
—
—
450
—
—
—
—
—
5.8
—
2.2
—
—
0.04
—
Max.
1
7
0.5
4.0
—
14
2.4
0.75
—
350
150
550
800
600
—
4.6
—
0.14
0.24
—
0.09*
3
Unit
mA
V
µA
V
nF
nC
ns
ns
µC
V
V
K/W
Note 1. I
E
, I
EM
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*
*
2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
Feb. 2009
2
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
