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XR1002-QB-EV1 参数 Datasheet PDF下载

XR1002-QB-EV1图片预览
型号: XR1002-QB-EV1
PDF下载: 下载PDF文件 查看货源
内容描述: 18.0-30.0 GHz的砷化镓接收QFN封装,为7x7毫米 [18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm]
分类和应用:
文件页数/大小: 10 页 / 739 K
品牌: MIMIX [ MIMIX BROADBAND ]
 浏览型号XR1002-QB-EV1的Datasheet PDF文件第1页浏览型号XR1002-QB-EV1的Datasheet PDF文件第2页浏览型号XR1002-QB-EV1的Datasheet PDF文件第3页浏览型号XR1002-QB-EV1的Datasheet PDF文件第4页浏览型号XR1002-QB-EV1的Datasheet PDF文件第6页浏览型号XR1002-QB-EV1的Datasheet PDF文件第7页浏览型号XR1002-QB-EV1的Datasheet PDF文件第8页浏览型号XR1002-QB-EV1的Datasheet PDF文件第9页  
18.0-30.0 GHz GaAs Receiver  
QFN, 7x7 mm  
November 2006 - Rev 03-Nov-06  
R1002-QB  
App Note [1] Biasing - This device is operated with both stages in parallel, and can be biased for low noise performance or high  
power performance. Low noise bias is nominally Vd=4.5V, Id=135mA and is the recommended bias condition. More controlled  
performance will be obtained by separately biasing Vd1 and Vd2 each at 4.5V, 65mA. Power bias may be as high as Vd=5.5V,  
Id=270mA with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V,  
135mA. Attenuator bias,Vg3, can be adjusted from 0.0 to -1.2V with 0.0V providing maximum attenuation and -1.2V providing  
minimum attenuation. Image reject mixer bias,Vg4, should nominally be -0.8V to minimize sensitivity of mixer performance to LO  
level. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the  
most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a  
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the  
current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed  
to do this is -0.5V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the  
applied voltage to ensure negative gate bias is available before applying the positive drain supply.  
MTTFTables  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
81 deg Celsius  
101 deg Celsius  
121 deg Celsius  
-
6.77E+11  
4.09E+10  
3.29E+09  
1.48E-03  
2.44E-02  
3.04E-01  
65.0° C/W  
-
Bias Conditions: Vd=3.0V, Id=135 mA  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
142 deg Celsius  
162 deg Celsius  
182 deg Celsius  
-
4.11E+08  
5.36E+07  
8.35E+06  
2.43E+00  
1.87E+01  
1.20E+02  
58.9° C/W  
-
Bias Conditions: Vd=5.5V, Id=270 mA  
Page 5 of 10  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.