6.0-18.0 GHz GaAs MMIC
Power Amplifier
August 2007 - Rev 30-Aug-07
CMM0618-BD
Chip Device Layout
Features
Wide Band Power Amplifier
Positive Gain Slope
10.5 dB Small Signal Gain
+29.0 dBm P1dB Compression Point
+36.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage 6.0-18.0 GHz GaAs
MMIC power amplifier has a small signal gain of 10.5
dB with a +29.0 dBm P1dB output compression point
and is ideal for use in a balanced configuration. This
MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Test Instrumentation, Military,
Space, Microwave Point-to-Point Radio, SATCOM and
VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+8.0 VDC
500, 500 mA
+0.0 VDC
+25.0 dBm
-65 to +165
O
C
-55 to MTTF Graph
1
MTTF Graph
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intermods (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd=7.0 V, Vg=-0.8 V Typical)
Supply Current (Id2) (Vd=7.0 V, Vg=-0.8 V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
mA
Min.
6.0
-
-
-
-
-
-
-
-
-
-2.0
-
Typ.
-
7.0
5.0
10.5
+/-1.5
40.0
+29.0
+36.0
+30.0
+6.0
-0.8
375
375
Max.
18.0
-
-
-
-
-
-
-
-
+7.5
-0.1
425
425
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
