27.0-36.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 20-May-05
Features
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
+20.0 dBm Output Third Order Intercept (OIP3)
2.0 dBm LO Drive Level
20.0 dB Image Rejection, 9.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Mimix Broadband’s 27.0-36.0 GHz GaAs MMIC transmitter has a
+20.0 dBm output third order intercept and 20.0 dB image
rejection across the band. This device is an image reject sub-
harmonic anti-parallel diode mixer followed by a three stage
output amplifier and includes an integrated LO buffer amplifier.
The image reject mixer reduces the need for unwanted
sideband filtering before the power amplifier. The use of a sub-
harmonic mixer makes the provision of the LO easier than for
fundamental mixers at these frequencies. I and Q mixer inputs
are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix Broadband’s
0.15
µm
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high repeatability
and uniformity. The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
27TRX0357
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
uc
Min.
27.0
27.0
12.0
DC
-
-
-
-
-
-
-
-1.2
-
-
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
2
LO Input Drive (P
LO
)
Image Rejection
2
Isolation LO/RF @ LOx1/LOx2
Output Third Order Intercept (OIP3)
1,2
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical)
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
e-
pr
od
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dBm
VDC
VDC
mA
mA
Typ.
-
-
-
-
15.0
9.0
+2.0
20.0
10.0
+20.0
+4.0
-0.3
230
140
Pr
tio
General Description
+4.5 VDC
320, 190 mA
+0.3 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
3
MTTF Table
3
Max.
36.0
36.0
19.5
3.0
-
-
-
-
-
-
+4.5
+0.1
280
170
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n
Page 1 of 7
MIMIX [ MIMIX BROADBAND ]
