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AS42C4256C-8/883C 参数 Datasheet PDF下载

AS42C4256C-8/883C图片预览
型号: AS42C4256C-8/883C
PDF下载: 下载PDF文件 查看货源
内容描述: [Video DRAM, 256KX4, 80ns, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 38 页 / 454 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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AS42C4256 883C  
256K x 4 VRAM  
AUSTIN SEMICONDUCTOR, INC.  
SPLIT READ TRANSFER (SPLIT DRAM-TO-SAM  
TRANSFER)  
The SPLIT READ TRANSFER (SRT) cycle eliminates the  
critical transfer timing required to maintain a continuous  
serial output data stream. When using normal TRANSFER  
cycles, the REAL-TIME READ TRANSFER cycle has to  
occur immediately after the last bit of “old data” was  
clocked out of the SAM port.  
When using the SPLIT TRANSFER mode, the SAM is  
divided into an upper half and a lower half. While data is  
being serially read from one half of the SAM, new DRAM  
data may be transferred to the other half. The transfer may  
occur at any time while the other half is sending data and  
need not be synchronized with the SC clock.  
Figure 4 shows a typical SPLIT READ TRANSFER initia-  
tion sequence. The normal READ TRANSFER is first per-  
formed,followed by a SPLITREAD TRANSFERofthe same  
row to the upper half of the SAM. The SRT to the upper half  
is optional and need only be done if the Tap for the upper  
half is 0. Serial access continues, and when the SAM  
address counter reaches 255 (“A8” = 0, A0-A7 = 1), the new  
Tap address is loaded for the next half (“A8” = 1, A0-A7 =  
Tap) and the QSF output goes HIGH. Once the serial access  
has switched to the upper SAM, new data may be trans-  
ferred to the lower SAM. The controller must wait for the  
state of QSF to change and then the new data may be  
transferred to the SAM half not being accessed. For  
example, the next step in Figure 4 would be to wait until  
QSFwent LOW (indicating that row-1data is shifting out of  
the lower SAM) and then transfer the upper half of row 1 to  
the upper SAM. If the half boundary is reached before an  
SRT is done for the next half a Tap address of “0” will be  
used. Access will start at 0 if going to the lower half, or 256  
if going to the upper half. See Figure 5.  
The /T/R/ (?O/E) tim ing is also relaxed for SPLIT  
TRANSFER cycles. The rising edge of TR/ (OE) is not used  
to complete the TRANSFER cycle and therefore is inde-  
pendent of the rising edges of RAS or CAS. The transfer  
timing is generated internally for SPLIT TRANSFER cycles.  
A SPLIT READ TRANSFER does not change the direction  
of the SAM port.  
A normal, non-split READ TRANSFER cycle must pre-  
cede any sequence of SPLIT READ TRANSFER cycles to set  
SAM I/ O direction and provide a reference to which half of  
the SAM the access will begin. Then SPLIT READ TRANS-  
FERS may be initiated by taking DSF HIGH when RAS  
goes LOW during the TRANSFER cycle. As in nonsplit  
transfers, the row address is used to specify the DRAM row  
to be transferred. The column address, A0-A7, is used to  
input theSAM Tap address.Addresspin A8isa “dont care”  
when the Tap address is loaded at the HIGH-to-LOW  
transition of CAS. It is internally generated so that the  
SPLIT TRANSFER will be to the SAM half not currently  
being accessed.  
WRITE TRANSFER (SAM-TO-DRAM TRANSFER)  
The operation ofthe WRITETRANSFERisidenticalto the  
READ TRANSFER described previously except (ME)/ WE  
and SE must be LOW when RAS goes LOW. The row  
address indicates the DRAM row to which the SAM data  
registers will be written. The column address (Tap) indi-  
cates the starting address of the next SERIAL INPUT cycle  
for the SAM data registers. A WRITE TRANSFER changes  
the direction ofthe SAM I/ O buffers to the input mode.QFS  
is LOW if access is to the lower half of the SAM, and HIGH  
if access is to the upper half.  
LOWER HALF  
NO SRT  
UPPER HALF  
NO SRT  
0
TAP  
255  
256  
511  
Start Split  
Figure 5  
SPLIT SAM TRANSFER  
AS42C4256 883C  
REV. 3/97  
DS000016  
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.  
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