PEM
AS28F128J3A
Q-Flash
DC Voltage specifications
2.7 ‐ 3.6V
2.7 ‐ 3.6V
Max
VCCQ
VCC
Parameter
Input Low Voltage
Input High Voltage
Test Conditions
Notes
2,5,6
2,5,6
Symbol
VIL
Min
‐0.5
2.0
Units
V
V
0.8
‐
‐
VIH
VCCQ+0.5
VCC = VCCMin
‐
0.4
0.2
‐
V
V
V
CCQ = VCCQ Min
I
OL = 2 mA
VCC = VCCMin
CCQ = VCCQ Min
OL = 100 µA
VCC = VCCMin
CCQ = VCCQ Min
OH = 2.5 mA
VOL
Output Low Voltage
Output High Voltage
1,2
‐
V
I
0.85 × VCCQ
V
I
VOH
V
V
1,2
2,3
VCC = VCCMin
V
CCQ – 0.2
‐
VCCQ = VCCQ Min
I
OH = 100 µA
VPEN Lockout during Program,
Erase and Lock‐Bit Operations
VPEN during Block Erase, Program,
or Lock‐Bit Operations
VPENLK
‐
2.2
‐
VPENH
VLKO
2.7
3.6
2.0
V
V
‐
‐
3
4
VCC Lockout Voltage
‐
Notes
1. Includes STS.
2. Sampled, not 100% tested.
3. Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not guaranteed in the range between VPENLK (max) and VPENH (min),
and above VPENH (max).
4. Block erases, programming, and lock-bit configurations are inhibited when VCC < VLKO, and not guaranteed in the range between VLKO (min) and VCC (min), and above
VCC (max).
5. Includes all operational modes of the device.
6. Input/Output signals can undershoot to -1.0V referenced to VSS and can overshoot to VCCQ + 1.0V for duration of 2ns or less, the VCCQ valid range is referenced to VSS.
Micross Components reserves the right to change products or specifications without notice.
AS28F128J3A
Rev. 5.8 8/13
5
MICROSS [ MICROSS COMPONENTS ]
