PEM
AS28F128J3A
Q-Flash
Bus Operations
Mode
Read Array
Output Disable
Standby
Reset/Power‐Down
Read Identifier Codes
Read Query
Read Status (ISM off)
Read Status (ISM on)
Write
RP\
VIH
VIH
VIH
VIL
VIH
VIH
VIH
VIH
VIH
CE0
CE1
CE2
OE\
VIL
VIH
X
WE\
VIH
VHI
X
VPEN
X
X
X
X
X
X
X
X
DQ
Dout
High‐Z
High‐Z
High‐Z
Notes
1,2,3
Address
STS Default Mode
High‐Z (VOH with External PU)
Enabled Enabled Enabled
Enabled Enabled Enabled
Disabled Disabled Disabled
X
X
X
X
X
X
X
X
X
X
X
High‐Z (VOH with External PU)
High‐Z (VOH with External PU)
High‐Z (VOH with External PU)
Enabled Enabled Enabled
Enabled Enabled Enabled
Enabled Enabled Enabled
Enabled Enabled Enabled
Enabled Enabled Enabled
VIL
VIL
VIL
VIL
VIH
VIH
VIH
VIH
VIH
VIL
4
5
See Table 31 of Numonyx DS
See CFI Query of Numonyx DS
X
X
X
X
X
X
Dout
Din
VPENH
3,6,7
Notes
1 Refer to DC Characteristics. When VPEN</= VPENLK, memory contents can be read but not altered
2 X can be VIL or VIH for control and address pins, and VPENLK or VPENH for VPEN. See DC Characteristics for VPENLK and VPENH voltages
3 In default mode, STA is VOL when the ISM is executing internal Block Erase, Program, or lock bit configuration algorithms. It is VOH when the ISM is not busy, in block erase suspend
mode, program suspend mode, or reset/power-down mode.
4 See Read Identifier codes of the Numonyx Datasheet (DS)
5 See Read Query Mode Command section of the Numonyx Datasheet (DS)
6 Command Writes involving block erase, program, or lock bit configuration are reliably executed when VPEN=VPENH and VCC is within Specification
7 Refer to Table 19 on page 35 of the Numonyx Datasheet (DS)
DC Electrical Characteristics
(TA=Min/Max temperatures of Operational Range chosen)
2.7 ‐ 3.6V
2.7 ‐ 3.6V
Max
VCCQ
VCC
Parameter
Test Conditions
Notes
Symbol
Typ
Units
V
V
CC = VCC Max; VCCQ = VCCQ Max
IN = VCCQ or VSS
ILI
Input and VPEN Load Current
‐
±1
µA
1
VCC = VCC Max; VCCQ = VCCQ Max
IN = VCCQ or VSS
ILO
Output Leakage Current
‐
±10
µA
µA
1
V
CMOS Inputs, VCC = VCC Max; VCCQ
CCQ Max, Device is disabled,
=
50
400
V
ICCS
VCC Standby Current
RP# = VCCQ ± 0.2 V
1,2,3
TTL Inputs, VCC = VCC Max,
0.71
50
2
mA
µA
VCCQ = VCCQ Max, Device is disabled, RP# = VIH
ICCD
VCC Power‐Down Current
RP# = VSS ± 0.2 V, IOUT (STS) = 0 mA
400
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads. Device is enabled. f = 5 MHz, IOUT = 0 mA
15
30
20
54
mA
mA
ICCR
8‐Word Page
1,3
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads. Device is enabled. f = 33 MHz, IOUT = 0 mA
CMOS Inputs, VPEN = VCC
35
40
35
40
60
70
70
80
mA
mA
mA
mA
ICCW
VCC Program or Set Lock‐Bit Current
1,4
1,4
TTL Inputs, VPEN = VCC
CMOS Inputs, VPEN = VCC
TTL Inputs, VPEN = VCC
ICCE
ICCBC
ICCWS
V
CC Block Erase or VCC Blank Check or
Clear Block Lock‐Bits Current
VCC Program Suspend or Block Erase
Suspend Current
‐
10
mA
Device is enabled
1,5
ICCES
Notes
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds).
2. Includes STS.
3. CMOS inputs are either VCC ± 0.2 V or VSS ± 0.2 V. TTL inputs are either VIL or VIH.
4. Sampled, not 100% tested.
5. ICCWS and ICCES are specified with the device selected. If the device is read or written while in erase suspend mode, the
device’s current draw is ICCR and ICCWS.
Micross Components reserves the right to change products or specifications without notice.
AS28F128J3A
Rev. 5.8 8/13
4
MICROSS [ MICROSS COMPONENTS ]
