SRAM
AS5C4009LL
Austin Semiconductor, Inc.
CAPACITANCE
PARAMETER
CONDITIONS
SYMBOL MAXIMUM
UNITS
NOTES
VIN=0V
VIO=0V
CIN
CIO
TA = 25oC, f = 1MHz
Input Capacitance
8
pF
4
VCC = 5V
Input/Output Capactiance
10
pF
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC < TA < 125oC;Vcc = 5V +10%)
-55
-70
-85
-100
DESCRIPTION
READ Cycle
SYM
MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
t RC
t AA
t ACE
t OH
READ cycle Time
55
70
85
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
55
55
70
70
85
85
100
100
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
Output Enable access time
Output Enable to output in Low-Z
10
10
10
10
10
10
10
10
t LZCE
t HZCE
t PU
4,6
4,6
4
20
25
30
30
0
5
0
5
0
5
0
5
t PD
55
30
70
35
85
40
100
45
4
t AOE
t LZOE
t HZOE
4,6
4,6
Output disable to output in High-Z
20
25
30
30
WRITE Cycle
t WC
t CW
t AW
WRITE cycle time
55
50
50
0
70
60
60
0
85
70
70
0
100
80
80
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable to end of write
Address valid to end of write
Address setup time
t AS
t AH
Address hold from end of write
WRITE pulse width
0
0
0
0
t WP1
t DS
50
30
0
60
30
0
70
35
0
80
40
0
Data setup time
t DH
Data hold time
t LZWE
t HZWE
Write disable to output in Low-Z
Write Enable to output in High-Z
5
5
5
5
4,6
4,6
25
25
30
30
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4009LL
Rev. 4.0 2/01
4
MICROSS [ MICROSS COMPONENTS ]
