PRELIMINARY
MTS1512K8CxxLSJ2
4Mb Monolithic SRAM
CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
C
I
C
O
CONDITIONS
V
IN
=0V, ƒ=1.0MHz
V
IN
=0V, ƒ=1.0MHz
MAX
8
8
UNITS
pf
pf
481 ohm
481 ohm
AC TEST CONDITIONS
PARAMETER
Input Pulse Levels
Input Rise & Fall times
Input Timing Reference levels
Output Timing Reference levels
Output Test Load
Output Test Load (Z testing)
LIMIT
VSS to 3.0
≤
3
1.5
1.5
Figure 1
Figure 2
UNITS
V
ns
V
V
30 pF
255 ohm
5 pF
255 ohm
Figure 1
Figure 2
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input leakage current
Output leakage current
Operating current
SYMBOL
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC1
GND < VI < VCC
GND < VO < VCC
(Output disabled)
12ns
15ns
17ns
20ns
25ns
35ns
45ns
CS\
≥ V
IH
, all other inputs ≤
Standby, TTL inputs
I
CC2
V
IL
, V
CC
= MAX, ƒ = 0, Outputs
Open
CS\
≥
V
CC
-0.2V; V
CC
= MAX,
Standby, CMOS inputs
I
CC3
V
IN
≤
V
SS
+0.2V or V
IH
≥
V
CC
-
0.2V;
ƒ
= 0
20
mA
30
mA
CONDITIONS
VCC=Min., IOH = -4.0 mA
VCC=Min., IOH = 8.0mA
MIN
2.4
0.4
2.2
-0.5
-10
-10
V
CC
+0.5
0.8
10
10
80
80
75
75
75
75
75
MAX
UNITS NOTE(S)
V
V
V
V
µ
A
µ
A
mA
mA
mA
mA
mA
mA
mA
3
3
3
3
3
3
3
1
1
1
1,2
MTS1512K8C-L - Rev 1.1 - 07/12
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
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