FLASH
AS8F512K32
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55°C < TA < 125°C;VCC = 5V +/- 10%)
Erase and Program WE\ Controlled
Parameter
Symbol
Speed Options
Units
Parameter Description
Write Cycle Time
-70
70
JEDEC
Std.
tWC
-90
90
-120
120
-150
150
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
Min
Min
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
tAS
tAH
0
Address Setup Time
Address Hold Time
Data Setup Time
45
30
45
45
50
50
50
50
tDS
tDH
tOES
0
0
Write Enable High to Input Transition
Output Enable Setup Time
Read Recover time Before Write
(OE\ high to WE\ low)
tGHWL
tGHWL
0
Min
ns
tELWL
tWHEH
tWLWH
tWHWL
tCS
tCH
tWP
tWPH
0
0
Min
Min
Min
Min
Min
ns
ns
ns
ns
us
CE\ Setup Time
CE\ Hold Time
35
45
50
50
Write Pulse Width
20
16
Write Pulse Width High
Programming Operation
Sector Erase Operation
tWHWH1 tWHWH1
tWHWH2 tWHWH2
tWHWH3 tWHWH3
tVCHEL
Max
Max
Min
sec
sec
us
30
Chip Erase Operation
VCC Setup Time
120
50
Chip Program Time
Max
sec
50
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8F512K32
Rev. 4.0 6/01
12
MICROSS [ MICROSS COMPONENTS ]
