5962-9461105HTX 参数 Datasheet PDF下载

Austin Semiconductor, Inc.

CAPACITANCE

(V

IN

= 0V, f = 1MHz, T

A

= 25

o

C

)1

SYMBOL

C

ADD

C

OE

C

WE,

C

CS

C

IO

C

WE

("A" version)

PARAMETER

A0 - A18 Capacitance

OE\ Capacitance

WE\ and CS\ Capacitance

I/O 0- I/O 31 Capacitance

WE\ Capacitance

MAX

50

50

20

20

50

AS8S512K32

& AS8S512K32A

SRAM

UNITS

pF

pF

pF

pF

pF

NOTE:

1. This parameter is sampled.

AC TEST CONDITIONS

Test Specifications

Input pulse levels.........................................V

SS

to 3V

Input rise and fall times.........................................5ns

Input timing reference levels...............................1.5V

Output reference levels........................................1.5V

Output load..............................................See Figure 1

I

OL

Current Source

Device

Under

Test

-

+

+

Vz = 1.5V

(Bipolar

Supply)

Ceff = 50pf

Current Source

I

OH

NOTES:

Vz is programmable from -2V to + 7V.

I

OL

and I

OH

programmable from 0 to 16 mA.

Vz is typically the midpoint of V

OH

and V

OL

.

I

OL

and I

OH

are adjusted to simulate a typical resistive load

circuit.

Figure 1

AS8S512K32 & AS8S512K32A

Rev. 6.0 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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