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WS128K32-17G1UIA 参数 Datasheet PDF下载

WS128K32-17G1UIA图片预览
型号: WS128K32-17G1UIA
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM Module, 128KX32, 17ns, CMOS, CQFP68, 23.90 MM, 3.57 MM HEIGHT, CERAMIC, QFP-68]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 437 K
品牌: MICROSEMI [ Microsemi ]
 浏览型号WS128K32-17G1UIA的Datasheet PDF文件第1页浏览型号WS128K32-17G1UIA的Datasheet PDF文件第2页浏览型号WS128K32-17G1UIA的Datasheet PDF文件第4页浏览型号WS128K32-17G1UIA的Datasheet PDF文件第5页浏览型号WS128K32-17G1UIA的Datasheet PDF文件第6页浏览型号WS128K32-17G1UIA的Datasheet PDF文件第7页浏览型号WS128K32-17G1UIA的Datasheet PDF文件第8页浏览型号WS128K32-17G1UIA的Datasheet PDF文件第9页  
WS128K32-XXX  
White Electronic Designs  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
Vcc+0.5  
150  
Unit  
°C  
°C  
V
CS  
H
L
OE  
X
WE  
X
Mode  
Standby  
Read  
Data I/O  
High Z  
Power  
Standby  
Active  
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
L
H
Data Out  
Data In  
High Z  
TSTG  
VG  
L
X
L
Write  
Active  
L
H
H
Out Disable  
Active  
TJ  
°C  
V
CAPACITANCE  
VCC  
-0.5  
7.0  
(TA = +25°C)  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
Conditions  
Max Unit  
Parameter  
Symbol  
Min  
Max  
Unit  
V
OE capacitance  
COE  
V
V
IN = 0V, f = 1.0 MHz  
IN = 0V, f = 1.0 MHz  
50  
pF  
pF  
Supply Voltage  
VCC  
4.5  
5.5  
WE1-4 capacitance  
HIP (PGA) H1  
CQFP G4T  
CQFP G2U/G2L  
CQFP G1U/G1T  
CWE  
Input High Voltage  
Input Low Voltage  
Operating Temp. (Mil.)  
VIH  
2.2  
VCC + 0.3  
+0.8  
V
20  
50  
20  
20  
VIL  
-0.3  
-55  
V
TA  
+125  
°C  
CS1-4 capacitance  
CCS  
CI/O  
CAD  
V
IN = 0V, f = 1.0 MHz  
20  
20  
50  
pF  
pF  
pF  
Data I/O capacitance  
V
I/O = 0V, f = 1.0 MHz  
IN = 0V, f = 1.0 MHz  
Address input capacitance  
V
This parameter is guaranteed by design but not testedꢀ  
DC CHARACTERISTICS  
(VCC = 5#0V, GND = 0V, TA = -55°C TO +125°C)  
Parameter  
Sym  
Conditions  
-15  
Max  
-17  
Min Max  
-20  
Min Max  
-25  
Max  
Units  
Min  
Min  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current  
Standby Current  
ILI  
ILO  
VCC = 5.5, VIN = GND to VCC  
10  
10  
10  
10  
10  
10  
µA  
µA  
mA  
mA  
V
CS = VIH, OE = VIH, VOUT = GND to VCC  
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5  
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5  
IOL = 8mA, VCC = 4.5  
10  
600  
10  
600  
ICC  
600  
80  
600  
60  
ISB  
80  
80  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
0.4  
0.4  
0.4  
0.4  
IOH = -4.0mA, VCC = 4.5  
2.4  
2.4  
2.4  
2.4  
V
Parameter  
Sym  
Conditions  
-35  
-45  
-55  
Units  
Min  
Max  
Min  
Max  
Min  
Max  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current  
Standby Current  
ILI  
ILO  
VCC = 5.5, VIN = GND to VCC  
10  
10  
10  
10  
10  
µA  
µA  
mA  
mA  
V
CS = VIH, OE = VIH, VOUT = GND to VCC  
10  
600  
60  
ICC  
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5  
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5  
IOL = 2.1mA, VCC = 4.5  
600  
60  
600  
60  
ISB  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
0.4  
0.4  
0.4  
IOH = -1.0mA, VCC = 4.5  
2.4  
2.4  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0ꢀ3V, VIL = 0ꢀ3V  
DATA RETENTION CHARACTERISTICS (FOR WS128K32L-XXX ONLY)  
(TA = -55°C TO +125°C), (TA = -40°C TO +85°C)  
Characteristic  
Sym  
Conditions  
VCC = 2.0V  
CS VCC -0.2V  
VCC -0.2V  
orVIN - 0.2V  
Min  
Typ  
Max  
Units  
V
mA  
ns  
Data Retention Voltage  
Data Retention Quiescent Current  
Chip Disable to Data Retention Time (1)  
VCC  
ICCDR  
TCDR  
2
-
0
-
1
-
-
2
-
VIN  
Operation Recovery Time (1)  
TR  
TRC  
-
ns  
NOTE: Parameter guaranteed, but not testedꢀ  
3
White Electronic Designs Corporation • (602) 437-1520 • wwwꢀwhiteedcꢀcom  
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