Electrical characteristics
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Table 6.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Condictions
V
DD
=300 V, I
D
= 0.4A,
R
G
=4.7Ω, V
GS
=10V
Min.
Typ.
5.5
5
13
28
Max.
Unit
ns
ns
ns
ns
Table 7.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=0.8A, V
GS
=0
I
SD
=0.8A,
di/dt = 100A/µs,
V
DD
=20V, Tj=25°C
I
SD
=0.8A,
di/dt = 100A/µs,
V
DD
=20V, Tj=150°C
135
216
3.2
140
224
3.2
Test Condictions
Min
Typ.
Max
0.8
2.4
1.6
Unit
A
A
V
ns
nC
A
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 8.
Symbol
BV
GSO(1)
1.
Gate-source zener diode
Parameter
Gate-source Braekdown
Voltage
Test Condictions
Igs=±1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
4/14
Rev 7
MICROSEMI [ MICROSEMI CORPORATION ]
