Electrical ratings
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(1)
P
TOT
Absolute maximum ratings
Value
Parameter
IPAK
Drain-Source Voltage (V
GS
= 0)
Drain-Gate Voltage (R
GS
= 20KΩ)
Gate-Source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
=100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
0.8
0.5
3.2
25
0.24
3
0.25
800
4.5
-55 to 150
TO-92
600
600
± 30
0.3
0.189
1.2
3.3
0.26
0.3
SOT-223
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Unit
V
ESD(G-D)
dv/dt
(2)
T
J
T
stg
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
1. Pulse width limited by safe operating area
2. I
SD
≤0.3A,
di/dt
≤200A/µs,
V
DD
=80%V
(BR)DSS
Table 2.
Symbol
R
thj-case
R
thj-a
R
thj-lead
T
l
Thermal resistance
Value
Parameter
IPAK
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Maximum lead temperature for soldering
purpose
5
100
--
275
TO-92
--
120
40
260
SOT-223
--
37.87
(1)
--
°C/W
°C/W
°C/W
°C
Unit
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
Table 3.
Symbol
I
AR
E
AS
Avalanche data
Parameter
Avalanche Curent, Repetitive or Noy-Repetitive
(pulse width limited by Tj Max)
Single pulse avalanche Energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
0.8
60
Unit
A
mJ
2/14
Rev 7
MICROSEMI [ MICROSEMI CORPORATION ]
