2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 5.5 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 3.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 2.5 A, V
DS
= 50 V
Gate to Source Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
V
GS
= 10 V, I
D
= 5.5 A, V
DS
V
GS
= 10 V, I
D
= 3.0 A, V
DS
V
GS
= 10 V, I
D
= 2.5 A, V
DS
Gate to Drain Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
V
GS
= 10 V, I
D
= 5.5 A, V
DS
V
GS
= 10 V, I
D
= 3.0 A, V
DS
V
GS
= 10 V, I
D
= 2.5 A, V
DS
= 50 V
= 50 V
= 50 V
= 50 V
= 50 V
= 50 V
= 50 V
= 50 V
Symbol
Min.
Max.
Unit
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
Q
g(on)
28.51
42.07
34.75
33.00
6.34
5.29
5.75
4.46
16.59
28.11
16.59
28.11
nC
Q
gs
nC
Q
gd
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I
D
= 8.0 A, V
GS
= +10 V, R
G
I
D
= 5.5 A, V
GS
= +10 V, R
G
I
D
= 3.0 A, V
GS
= +10 V, R
G
I
D
= 2.5 A, V
GS
= +10 V, R
G
Rinse time
I
D
= 8.0 A, V
GS
I
D
= 5.5 A, V
GS
I
D
= 3.0 A, V
GS
I
D
= 2.5 A, V
GS
= +10 V, R
G
= +10 V, R
G
= +10 V, R
G
= +10 V, R
G
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 8.0 A
= 5.5 A
= 3.0 A
= 2.5 A
= 30 V
= 77 V
= 176 V
= 225 V
= 30 V
= 77 V
= 176 V
= 225 V
= 30 V
= 77 V
= 176 V
= 225 V
= 30 V
= 77 V
= 176 V
= 225 V
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
Symbol
Min.
Max.
Unit
t
d(on)
30
ns
t
r
75
50
35
30
40
50
55
55
45
40
35
30
300
500
700
900
ns
Turn-off delay time
I
D
= 8.0 A, V
GS
= +10 V, R
G
I
D
= 5.5 A, V
GS
= +10 V, R
G
I
D
= 3.0 A, V
GS
= +10 V, R
G
I
D
= 2.5 A, V
GS
= +10 V, R
G
Fall time
I
D
= 8.0 A, V
GS
I
D
= 5.5 A, V
GS
I
D
= 3.0 A, V
GS
I
D
= 2.5 A, V
GS
= +10 V, R
G
= +10 V, R
G
= +10 V, R
G
= +10 V, R
G
t
d(off)
ns
t
f
ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
t
rr
ns
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 4 of 9
MICROSEMI [ MICROSEMI CORPORATION ]
