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2N930 参数 Datasheet PDF下载

2N930图片预览
型号: 2N930
PDF下载: 下载PDF文件 查看货源
内容描述: NPN小功率硅晶体管 [NPN LOW POWER SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 57 K
品牌: MICROSEMI [ Microsemi ]
 浏览型号2N930的Datasheet PDF文件第1页  
2N930, JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
ON CHARACTERISTICS (3)  
Forward-Current Transfer Ratio  
IC = 10 mAdc, VCE = 5.0 Vdc  
100  
150  
300  
600  
hFE  
IC = 500 mAdc, VCE = 5.0 Vdc  
IC = 10 mAdc, VCE = 5.0 Vdc  
Collector-Emitter Saturation Voltage  
IC = 10 mAdc, IB = 0.5 mAdc  
Base-Emitter Saturation Voltage  
IC = 10 mAdc, IB = 0.5 mAdc  
Vdc  
Vdc  
VCE(sat)  
VBE(sat)  
1.0  
1.0  
0.6  
DYNAMIC CHARACTERISTICS  
Magnitude of Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
½hfe½  
IC = 500 mAdc, VCE = 5.0 Vdc, f = 30 MHz  
1.5  
150  
25  
6.0  
600  
32  
Small-Signal Short-Circuit Forward Current Transfer Ratio  
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz  
Small-Signal Short-Circuit Input Impedance  
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz  
Small-Signal Short-Circuit Output Admittance  
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz  
Output Capacitance  
hfe  
hib  
W
mW  
pF  
hob  
1.0  
8.0  
Cobo  
VCB = 5.0 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz  
Noise Figure  
VCE = 5 Vdc; IC = 10 mAdc; Rg =10kW  
Test 1: f = 100 Hz  
Test 2: f = 1.0 kHz  
NF  
dB  
5
3
3
Test 3: f = 10 kHz  
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
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