TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
Value
45
60
6.0
30
300
600
-55 to +200
Max.
97
Units
Vdc
Vdc
Vdc
mAdc
mW
0
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/
0
C above T
A
= +25
0
C
2) Derate linearly 4.0 mW/
0
C above T
C
= +25
0
C
0
TO- 18*
(TO-206AA)
Unit
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)CEO
I
CBO
Min.
Max.
Unit
Vdc
10
10
10
5.0
2.0
2.0
µAdc
ηAdc
µAdc
ηAdc
ηAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 45 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc
Collector-Base Cutoff Current
V
CE
= 5.0 Vdc
45
I
EBO
I
CES
I
CEO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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