TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio
I
C
= 4mAdc, V
CE
= 10Vdc, f = 100MHz
Output Capacitance
V
CB
= 0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
Noise Figure (1)
V
CE
= 6V, I
C
= 1.0mA, f = 60MHz
g
s
= 2.5mmho
Small-Signal Power Gain (1)
V
CB
= 12V, I
C
= 6.0mA, f = 200MHz
Collector-Base Time Constant (1)
V
CB
= 10V, I
E
= -4.0mA, f = 79.8MHz
Oscillator Power Output (1)
V
CB
= 1.5V, I
C
= 8.0mA, f
≥
500MHz
Collector Efficiency
V
CB
= 15V, I
C
= 8.0mA, f > 500MHz
NOTES:
(1) For more detail see MIL-PRF-19500/301
Symbol
|h
fe
|
C
obo1
C
obo2
C
ibo
Min.
6.0
Max.
18
3.0
1.7
2.0
Unit
pF
pF
NF
6.0
dB
G
pe
R
b’CC
P
o
n
15
25
30
25
dB
ps
mW
%
T4-LDS-0010 Rev. 3 (101342)
Page 2 of 4
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