TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/301
DEVICES
LEVELS
2N918
2N918UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
(1)
Operating & Storage Junction Temperature Range
Note:
1) Derate linearly 1.14mW/°C above T
A
> 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 3mAdc
Collector-Base Cutoff Current
V
CB
= 30Vdc
V
CB
= 25Vdc
V
CB
= 25Vdc; T
A
= +150°C
Emitter-Base Cutoff Current
V
EB
= 3.0Vdc
V
EB
= 2.5Vdc
Forward-Current Transfer Ratio
I
C
= 0.5mAdc, V
CE
= 10Vdc
I
C
= 3.0mAdc, V
CE
= 1.0Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 3.0mAdc, V
CE
= 1.0Vdc; T
A
= -55°C
Collector-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
Base-Emitter Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
V
CE(sat)
V
BE(sat)
h
FE
V
(BR)CEO
15
1.0
10
1.0
10
10
10
20
20
10
0.4
1.0
Vdc
Vdc
200
Vdc
µAdc
ηAdc
µAdc
µAdc
ηAdc
Symbol
Min.
Max.
Unit
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
& T
stg
Value
15
30
3.0
50
200
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
°C
TO-72
2N918
I
CBO
3 PIN
2N918UB
I
EBO
T4-LDS-0010 Rev. 3 (101342)
Page 1 of 4
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