2N5179
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
VCEO(sus)
BVCBO
BVEBO
ICBO
Test Conditions
Min.
Collector-Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC=1.0
µAdc,
IE=0)
Emitter Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
12
20
2.5
-
Value
Typ.
-
-
-
-
Max.
-
-
-
.02
Unit
Vdc
Vdc
Vdc
µA
(on)
HFE
VBE(sat)
VCE(sat)
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
25
-
-
-
-
-
250
1.0
0.4
-
Vdc
Vdc
DYNAMIC
Symbol
f
T
CCB
Test Conditions
Min.
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
Collector-base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
900
-
Value
Typ.
1500
-
Max.
-
1.0
Unit
MHz
pF
MSC1305.PDF 10-25-99
MICROSEMI [ MICROSEMI CORPORATION ]
