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2N5038 参数 Datasheet PDF下载

2N5038图片预览
型号: 2N5038
PDF下载: 下载PDF文件 查看货源
内容描述: NPN大功率硅晶体管 [NPN HIGH POWER SILICON TRANSISTOR]
分类和应用: 晶体晶体管高功率电源
文件页数/大小: 2 页 / 59 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
 浏览型号2N5038的Datasheet PDF文件第1页  
2N5038, 2N5039, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 0.5 Adc, V
CE
= 5.0 Vdc
I
C
= 2.0 Adc, V
CE
= 5.0 Vdc
I
C
= 12 Adc, V
CE
= 5.0 Vdc
I
C
= 10 Adc, V
CE
= 5.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 12 Adc, I
B
= 1.2 Adc
I
C
= 10 Adc, I
B
= 1.0 Adc
I
C
= 20 Adc, I
B
= 5.0 Adc
Base-Emitter Saturation Voltage
I
C
= 20 Adc, I
B
= 5.0 Adc
Base-Emitter Voltage
I
C
= 12 Adc, V
CE
= 5.0 Vdc
I
C
= 10 Adc, V
CE
= 5.0 Vdc
2N5038
2N5039
2N5038
2N5039
2N5038
2N5039
2N5038
2N5039
Both
h
FE
50
30
50
30
15
15
200
150
V
CE(sat)
1.0
1.0
2.5
3.3
1.8
1.8
Vdc
V
BE(sat)
2N5038
2N5039
Vdc
Vdc
V
BE
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 2.0 Adc, V
CE
= 10 Vdc, f = 5.0 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
h
FE
C
obo
12
48
500
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30
±
2 Vdc; I
C
= 12 Adc; I
B1
=
1.2 Adc
V
CC
= 30
±
2 Vdc; I
C
= 10 Adc; I
B1
=
1.0 Adc
Turn-Off Time
V
CC
= 30
±
2 Vdc; I
C
= 12 Adc; I
B1
= -
I
B2
=
1.2 Adc
V
CC
= 30
±
2 Vdc; I
C
= 10 Adc; I
B1
= -
I
B2
=
1.0 Adc
2N5038
2N5039
2N5038
2N5039
t
on
0.5
µs
t
off
2.0
µs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 28 Vdc, I
C
= 5.0 Adc
Test 2
V
CE
= 45 Vdc, I
C
= 0.9 Adc
Test 3
V
CE
= 7.0 Vdc, I
C
= 20 Adc
Test 4
V
CE
= 90 Vdc, I
C
= 0.23 Adc
2N5038
Test 4
V
CE
= 75 Vdc, I
C
= 0.32 Adc
2N5039
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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