TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices
2N5038
2N5039
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
C
= +25
0
C
(1)
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
2N5038
90
150
2N5039
75
125
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
7.0
5.0
20
140
-65 to +200
Max.
1.25
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
θ
JC
0
0
1) Derate linearly 800 mW/ C for T
C
> +25 C
Unit
0
C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Emitter-Base Breakdown Voltage
I
E
= 25 mAdc
Collector-Base Cutoff Current
V
CE
= 150 Vdc
V
CE
= 125 Vdc
Collector-Base Cutoff Current
V
CE
= 70 Vdc
V
CE
= 55 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
BE
= -1.5 Vdc V
CE
= 100 Vdc
V
BE
= -1.5 Vdc V
CE
= 85 Vdc
2N5038
2N5039
V
(BR)
CEO
V
(BR)
EBO
2N5038
2N5039
2N5038
2N5039
I
CBO
90
75
7.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
Vdc
Vdc
µAdc
I
CEO
I
EBO
µAdc
µAdc
µAdc
2N5038
2N5039
I
CEX
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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