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2N4427 参数 Datasheet PDF下载

2N4427图片预览
型号: 2N4427
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 晶体晶体管射频微波放大器
文件页数/大小: 6 页 / 245 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
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2N4427
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCER
BVCEO
ICEO
ICEX
IEBO
Test Conditions
Min.
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector Cutoff Current
(VCE = 12 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, VBE = -1.5 Vdc)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
40
20
-
-
-
Value
Typ.
-
-
-
-
-
Max.
-
-
20
100
100
Unit
Vdc
Vdc
µA
µA
µA
(on)
HFE
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
10
5
-
-
200
-
-
-
Vdc
VCE(sat)
-
-
0.5
DYNAMIC
Symbol
f
T
COB
Test Conditions
Min.
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
500
-
Value
Typ.
-
4.0
Max.
-
-
Unit
MHz
pF
MSC1301.PDF 10-25-99