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2N4427 参数 Datasheet PDF下载

2N4427图片预览
型号: 2N4427
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 晶体晶体管射频微波放大器
文件页数/大小: 6 页 / 245 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N4427
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
1 Watt Minimum Power Output @ 175 MHz
500 MHz Current-Gain Bandwidth Product @ 50mA
Power Gain, G
PE
= 10dB (Min) @ 175 MHz
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
20
40
2.0
400
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
1.0
5.71
Watts
mW/ ºC
MSC1301.PDF 10-25-99