DATA SHEET
HAL880
4.4. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
TJ = TA + ΔT
At static conditions and continuous operation, the fol-
lowing equation applies:
ΔT = IDD × VDD × RthJ
For typical values use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA, the
temperature difference ΔT = 12.93 K.
For all sensors, the junction temperature TJ is speci-
fied. The maximum ambient temperature TAmax can be
calculated as:
TAmax = TLmax – ΔT
4.5. EMC and ESD
The HAL880 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V on-board system (product standard ISO 7637
part 1) are not relevant for these applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line, or by radiated
disturbances, the application circuit shown in Fig. 4–1
on page 23 is recommended. Applications with this
arrangement should pass the EMC tests according to
the product standards ISO 7637 part 3 (electrical tran-
sient transmission by capacitive or inductive coupling).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Micronas
Feb. 23, 2009; DSH000152_001EN
25
MICRONAS [ MICRONAS ]
