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HAL880 参数 Datasheet PDF下载

HAL880图片预览
型号: HAL880
PDF下载: 下载PDF文件 查看货源
内容描述: 可编程线性霍尔效应传感器 [Programmable Linear Hall-Effect Sensor]
分类和应用: 传感器
文件页数/大小: 34 页 / 1764 K
品牌: MICRONAS [ MICRONAS ]
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HAL880  
DATA SHEET  
3.7. Open-Circuit Detection  
at TJ = 40 °C to +140 °C. Typical Characteristics for TJ = 25 °C, after locking the sensor  
Symbol  
Parameter  
Pin No.  
Min.  
Typ.  
Max.  
Unit  
Comment  
DD = 5 V  
VOUT  
Output Voltage at  
Open VDD Line  
3
0
0
0.15  
V
V
RL = 10 kΩ to 200 kΩ  
VOUT  
Output Voltage at  
Open GND Line  
3
4.85  
4.9  
5.0  
V
VDD = 5 V  
10 kΩ RL 200 kΩ  
RL: can be pull-up or pull-down resistor  
3.8. Power-On Operation  
at TJ = 40 °C to +140 °C, after programming and locking. Typical Characteristics for TJ = 25 °C.  
Symbol  
PORUP  
Parameter  
Min.  
Typ.  
3.4  
Max.  
Unit  
V
Power-On Reset Voltage (UP)  
Power-On Reset Voltage (DOWN)  
PORDOWN  
3.0  
V
3.9. Overvoltage and Undervoltage Detection  
at TJ = 40 °C to +140 °C. Typical Characteristics for TJ = 25 °C, after programming and locking  
Symbol  
Parameter  
Pin No.  
Min.  
Typ.  
4.2  
Max.  
4.3  
Unit  
V
Conditions  
1)  
V
Undervoltage Detection Level  
Overvoltage Detection Level  
1
1
DD,UV  
DD,OV  
1)  
V
8.5  
8.9  
10.0  
V
1)  
If the supply voltage drops below V  
or rises above V  
, the output voltage is switched to V (97% of V at R = 10 kΩ to GND).  
DD,OV DD DD L  
DD,UV  
The CLAMP-LOW register has to be set to a voltage 200 mV.  
Note: The over- and undervoltage detection is activated only after locking the sensor!  
3.10. Magnetic Characteristics  
at TJ = 40 °C to +140 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,  
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.  
Typical Characteristics for TJ = 25 °C and VDD = 5 V.  
Symbol  
Parameter  
Pin No.  
Min.  
Typ.  
Max.  
Unit  
Conditions  
B = 0 mT, I  
B
Magnetic Offset  
3
0.5  
0
0.5  
mT  
= 0 mA, T = 25 °C,  
OUT J  
unadjusted sensor  
Offset  
ΔB  
/ΔT  
Magnetic Offset Change  
15  
0
15  
μT/K  
B = 0 mT, I = 0 mA  
Offset  
OUT  
due to T  
J
22  
Feb. 23, 2009; DSH000152_001EN  
Micronas