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HAL805UT-E 参数 Datasheet PDF下载

HAL805UT-E图片预览
型号: HAL805UT-E
PDF下载: 下载PDF文件 查看货源
内容描述: 可编程线性霍尔效应传感器 [Programmable Linear Hall Effect Sensor]
分类和应用: 传感器
文件页数/大小: 24 页 / 356 K
品牌: MICRONAS [ MICRONAS ]
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PRELIMINARY DATA SHEET  
HAL805  
Programmable Linear Hall Effect Sensor  
1. Introduction  
The sensor is designed for hostile industrial and auto-  
motive applications and operates with typically 5 V  
supply voltage in the ambient temperature range from  
40 °C up to 150 °C. The HAL 805 is available in the  
very small leaded package TO-92UT.  
The HAL 805 is a recent member of the Micronas fam-  
ily of programmable linear Hall sensors. As an exten-  
sion to the HAL 800, it offers open-circuit detection and  
individual programming of different sensors which are  
in parallel to the same supply voltage.  
1.1. Major Applications  
Due to the sensor’s versatile programming character-  
istics, the HAL 805 is the optimal system solution for  
applications such as:  
The HAL 805 is an universal magnetic field sensor  
with a linear output based on the Hall effect. The IC is  
designed and produced in sub-micron CMOS technol-  
ogy and can be used for angle or distance measure-  
ments if combined with a rotating or moving magnet.  
The major characteristics like magnetic field range,  
sensitivity, output quiescent voltage (output voltage at  
B = 0 mT), and output voltage range are programma-  
ble in a non-volatile memory. The sensor has a ratio-  
metric output characteristic, which means that the out-  
put voltage is proportional to the magnetic flux and the  
supply voltage.  
– contactless potentiometers,  
– angle sensors,  
– distance measurements,  
– magnetic field and current measurement.  
1.2. Features  
– high-precision linear Hall effect sensor with  
ratiometric output and digital signal processing  
The HAL 805 features a temperature-compensated  
Hall plate with choppered offset compensation, an A/D  
converter, digital signal processing, a D/A converter  
with output driver, an EEPROM memory with redun-  
dancy and lock function for the calibration data, a  
serial interface for programming the EEPROM, and  
protection devices at all pins. The internal digital signal  
processing is of great benefit because analog offsets,  
temperature shifts, and mechanical stress do not  
degrade the sensor accuracy.  
– multiple programmable magnetic characteristics in a  
non-volatile memory (EEPROM) with redundancy  
and lock function  
– open-circuit detection (ground and supply line break  
detection)  
– for programming an individual sensor within several  
sensors in parallel to the same supply voltage, a  
selection can be done via the output pin  
– to enable programming of an individual sensor  
amongst several sensors running parallel to the  
same supply voltage, each sensor can be selected  
via its output pin  
The HAL 805 is programmable by modulating the sup-  
ply voltage. No additional programming pin is needed.  
The easy programmability allows a 2-point calibration  
by adjusting the output voltage directly to the input sig-  
nal (like mechanical angle, distance, or current). Indi-  
vidual adjustment of each sensor during the cus-  
tomer’s manufacturing process is possible. With this  
calibration procedure, the tolerances of the sensor, the  
magnet, and the mechanical positioning can be com-  
pensated in the final assembly. This offers a low-cost  
alternative for all applications that presently need  
mechanical adjustment or laser trimming for calibrating  
the system.  
– temperature characteristics are programmable for  
matching all common magnetic materials  
– programmable clamping function  
– programming through a modulation of the supply  
voltage  
– operates from 40 °C up to 150 °C  
ambient temperature  
– operates from 4.5 V up to 5.5 V supply voltage in  
specification and functions up to 8.5 V  
In addition, the temperature compensation of the Hall  
IC can be fit to all common magnetic materials by pro-  
gramming first and second order temperature coeffi-  
cients of the Hall sensor sensitivity. This enables oper-  
ation over the full temperature range with high  
accuracy.  
– total error < 2.0% over operating voltage range and  
temperature range  
– operates with static magnetic fields and dynamic  
magnetic fields up to 2 kHz  
– overvoltage and reverse-voltage protection at all pins  
The calculation of the individual sensor characteristics  
and the programming of the EEPROM memory can  
easily be done with a PC and the application kit from  
Micronas.  
– magnetic characteristics extremely robust against  
mechanical stress  
– short-circuit protected push-pull output  
– EMC and ESD optimized design  
Micronas  
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