欢迎访问ic37.com |
会员登录 免费注册
发布采购

HAL581UA-E 参数 Datasheet PDF下载

HAL581UA-E图片预览
型号: HAL581UA-E
PDF下载: 下载PDF文件 查看货源
内容描述: 双线霍尔效应传感器系列 [Two-Wire Hall-Effect Sensor Family]
分类和应用: 传感器换能器
文件页数/大小: 36 页 / 1722 K
品牌: MICRONAS [ MICRONAS ]
 浏览型号HAL581UA-E的Datasheet PDF文件第28页浏览型号HAL581UA-E的Datasheet PDF文件第29页浏览型号HAL581UA-E的Datasheet PDF文件第30页浏览型号HAL581UA-E的Datasheet PDF文件第31页浏览型号HAL581UA-E的Datasheet PDF文件第32页浏览型号HAL581UA-E的Datasheet PDF文件第34页浏览型号HAL581UA-E的Datasheet PDF文件第35页浏览型号HAL581UA-E的Datasheet PDF文件第36页  
DATA SHEET  
HAL57x, HAL58x  
5. Application Notes  
5.2. Extended Operating Conditions  
5.1. Application Circuit  
All sensors fulfill the electrical and magnetic character-  
istics when operated within the Recommended Oper-  
ating Conditions (see page 14).  
Fig. 5–1 shows a simple application with a two-wire  
sensor. The current consumption can be detected by  
measuring the voltage over RL. For correct functioning  
Typically, the sensors operate with supply voltages  
above 3 V. However, below 3.75 V, the current con-  
sumption and the magnetic characteristics may be out-  
side the specification.  
of the sensor, the voltage between pin 1 and 2 (VDD  
)
must be a minimum of 3.75 V. With the maximum cur-  
rent consumption of 17 mA, the maximum RL can be  
calculated as:  
Note: The functionality of the sensor below 3.75 V is  
not tested on a regular base. For special test  
conditions, please contact Micronas.  
VSUPmin – 3.75 V  
-------------------------------------------  
=
RLmax  
17 mA  
1 V  
DD  
V
5.3. Start-Up Behavior  
SUP  
V
SIG  
Due to the active offset compensation, the sensors  
have an initialization time (enable time ten(O)) after  
applying the supply voltage. The parameter ten(O) is  
specified in the Electrical Characteristics (see  
page 15). During the initialization time, the current con-  
sumption is not defined and can toggle between low  
and high.  
R
L
2 or x GND  
x = pin 3 for TO92UA-1/-2 package  
x = pin 4 for SOT89B-1 package  
HAL57x  
Fig. 5–1: Application circuit 1  
After ten(O), the current consumption will be high if the  
applied magnetic field B is above BON. The current  
For applications with disturbances on the supply line or  
radiated disturbances, a series resistor RV (ranging  
from 10 Ω to 30 Ω) and a capacitor both placed close  
to the sensor are recommended (see Fig. 5–2). In this  
case, the maximum RL can be calculated as:  
consumption will be low if B is below BOFF  
.
HAL58x  
In case of sensors with an inverted switching behavior,  
the current consumption will be low if B > BOFF and  
VSUPmin – 3.75 V  
------------------------------------------  
RV  
RLmax  
=
high if B < BON  
.
17 mA  
Note: For magnetic fields between BOFF and BON, the  
current consumption of the HAL sensor will be  
either low or high after applying VDD. In order to  
achieve a defined current consumption, the  
1 V  
DD  
V
SUP  
R
V
V
SIG  
4.7 nF  
applied magnetic field must be above BON  
respectively, below BOFF  
,
R
.
L
2 or x GND  
x = pin 3 for TO92UA-1/-2 package  
x = pin 4 for SOT89B-1 package  
Fig. 5–2: Application circuit 2  
Micronas  
Dec. 22, 2008; DSH000145_003EN  
33  
 复制成功!