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HAL581UA-E 参数 Datasheet PDF下载

HAL581UA-E图片预览
型号: HAL581UA-E
PDF下载: 下载PDF文件 查看货源
内容描述: 双线霍尔效应传感器系列 [Two-Wire Hall-Effect Sensor Family]
分类和应用: 传感器换能器
文件页数/大小: 36 页 / 1722 K
品牌: MICRONAS [ MICRONAS ]
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HAL57x, HAL58x  
DATA SHEET  
5.4. Ambient Temperature  
5.5. EMC and ESD  
Due to internal power dissipation, the temperature on  
the silicon chip (junction temperature TJ) is higher than  
the temperature outside the package (ambient temper-  
ature TA).  
For applications with disturbances on the supply line or  
radiated disturbances, a series resistor and a capacitor  
are recommended (see Fig. 5–3). The series resistor  
and the capacitor should be placed as closely as pos-  
sible to the HAL sensor.  
TJ = TA + ΔT  
Applications with this arrangement passed the EMC  
tests according to the product standards ISO 7637.  
Please contact Micronas for detailed information and  
first EMC and ESD results.  
At static conditions and continuous operation, the fol-  
lowing equation applies:  
R
R
V2  
V1  
ΔT = IDD × VDD × Rth  
100 Ω  
30 Ω  
For all sensors, the junction temperature range TJ is  
specified. The maximum ambient temperature TAmax  
can be calculated as:  
1
V
DD  
V
EMC  
4.7 nF  
TAmax = TJmax ΔT  
2, x GND  
For typical values, use the typical parameters. For  
worst case calculation, use the max. parameters for  
IDD and Rth, and the max. value for VDD from the appli-  
cation.  
x = pin 3 for TO92UA-1/-2 package  
x = pin 4 for SOT89B-1 package  
Due to the range of IDDhigh, self-heating can be critical.  
The junction temperature can be reduced with pulsed  
supply voltage. For supply times (ton) ranging from 30  
μs to 1 ms, the following equation can be used:  
Fig. 5–3: Recommded EMC test circuit  
ton  
--------------------  
×
T = IDD × VDD × Rth  
toff + ton  
34  
Dec. 22, 2008; DSH000145_003EN  
Micronas  
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