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HAL581UA-E 参数 Datasheet PDF下载

HAL581UA-E图片预览
型号: HAL581UA-E
PDF下载: 下载PDF文件 查看货源
内容描述: 双线霍尔效应传感器系列 [Two-Wire Hall-Effect Sensor Family]
分类和应用: 传感器换能器
文件页数/大小: 36 页 / 1722 K
品牌: MICRONAS [ MICRONAS ]
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DATA SHEET  
HAL57x, HAL58x  
3.6. Characteristics  
at TJ = 40 °C to +140 °C, VDD = 3.75 V to 24 V  
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.  
Typical Characteristics for TJ = 25 °C and VDD = 12 V.  
Symbol  
Parameter  
Pin No.  
Min.  
5
Typ.  
6
Max.  
6.9  
6.9  
17  
Unit  
mA  
mA  
mA  
Test Conditions  
I
Low Current Consumption  
over Temperature Range  
1
DDlow  
4.5  
12  
6
for HAL579 only  
High Current Consumption  
over Temperature Range  
I
1
1
14.3  
DDhigh  
I
= 25 mA, T = 25 °C,  
J
V
Overvoltage Protection  
at Supply  
28.5  
145  
32  
V
DD  
DDZ  
t = 20 ms  
f
Internal Oscillator Chopper  
Frequency over Temperature  
Range  
kHz  
osc  
1)  
t
Enable Time of Output after  
1
30  
µs  
en(O)  
Setting of V  
DD  
V
V
= 12 V, R = 30 Ω  
t
t
Output Rise Time  
Output Fall Time  
1
1
0.4  
0.4  
1.6  
1.6  
µs  
µs  
DD  
s
r
= 12 V, R = 30 Ω  
DD  
s
f
SOT89B Package  
Thermal Resistance  
30 mm x 10 mm x 1.5 mm,  
pad size (see Fig. 3–6)  
2)  
R
R
R
Junction to Ambient  
Junction to Case  
209  
K/W  
K/W  
K/W  
thja  
thjc  
thjs  
2)  
56  
3)  
Junction to Solder Point  
82  
TO92UA Package  
Thermal Resistance  
2)  
R
R
R
Junction to Ambient  
Junction to Case  
246  
K/W  
K/W  
K/W  
thja  
thjc  
thjs  
2)  
70  
3)  
Junction to Solder Point  
127  
1)  
2)  
3)  
B > B + 2 mT or B < B  
Measured with a 1s0p board  
Measured with a 1s1p board  
2 mT for HAL57x, B > B  
+ 2 mT or B < B 2 mT for HAL58x  
OFF ON  
ON  
OFF  
1.80  
1.05  
1.45  
2.90  
1.05  
0.50  
1.50  
Fig. 3–6: Recommend pad size SOT89B-1  
Dimensions in mm  
Micronas  
Dec. 22, 2008; DSH000145_003EN  
15  
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