HAL54x
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
2.3
Typ.
Max.
4.2
Unit
mA
Conditions
T = 25 °C
I
Supply Current
1
1
3
3
DD
DD
J
I
Supply Current over
Temperature Range
1.6
5.2
mA
V
V
Overvoltage Protection
at Supply
1
3
−
−
28.5
28
32
32
V
V
I
= 25 mA, T = 25 °C,
DDZ
OZ
DD J
t = 20 ms
I = 25 mA, T = 25 °C,
OH
Overvoltage Protection at Output
J
t = 20 ms
V
V
Output Voltage
3
3
−
−
130
130
280
400
mV
mV
I
I
= 20 mA, T = 25 °C
OL
OL
OL
J
Output Voltage over
Temperature Range
= 20 mA
OL
I
I
f
Output Leakage Current
3
3
−
−
−
−
0.06
−
0.1
10
−
μA
Output switched off,
T = 25 °C, V = 4.3 to 24 V
OH
J
OH
Output Leakage Current over
Temperature Range
μA
Output switched off,
T ≤150 °C, V = 4.3 to 24V
OH
osc
J
OH
Internal Oscillator
62
kHz
T = 25 °C,
J
Chopper Frequency
V
= 4.5 to 24 V
DD
V
Reset Voltage
1
1
−
−
3.8
70
−
−
V
reset
1)
t
Enable Time of Output after
μs
V
V
= 12 V
en(O)
DD
Setting of V
DD
t
t
Output Rise Time
Output Fall Time
3
3
−
−
−
−
75
400
400
200
ns
= 12 V,
r
DD
R = 820 Ohm,
L
50
ns
C = 20 pF
f
L
R
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside
150
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
for pad size see Fig. 3–6
thJSB
R
case
Thermal Resistance Junction
to Soldering Point
−
−
150
200
K/W
thJA
TO92UA-1,
TO92UA-2
1)
B > B + 2 mT or B < B
- 2 mT
OFF
ON
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
14
Feb. 12, 2009; DSH000023_003EN
Micronas
MICRONAS [ MICRONAS ]
