欢迎访问ic37.com |
会员登录 免费注册
发布采购

HAL320 参数 Datasheet PDF下载

HAL320图片预览
型号: HAL320
PDF下载: 下载PDF文件 查看货源
内容描述: 差分霍尔效应传感器IC [Differential Hall-Effect Sensor IC]
分类和应用: 传感器
文件页数/大小: 22 页 / 1522 K
品牌: MICRONAS [ MICRONAS ]
 浏览型号HAL320的Datasheet PDF文件第14页浏览型号HAL320的Datasheet PDF文件第15页浏览型号HAL320的Datasheet PDF文件第16页浏览型号HAL320的Datasheet PDF文件第17页浏览型号HAL320的Datasheet PDF文件第18页浏览型号HAL320的Datasheet PDF文件第19页浏览型号HAL320的Datasheet PDF文件第21页浏览型号HAL320的Datasheet PDF文件第22页  
HAL320  
DATA SHEET  
4. Application Notes  
4.2. Extended Operating Conditions  
Mechanical stress can change the sensitivity of the Hall  
plates and an offset of the magnetic switching points  
may result. External mechanical stress on the sensor  
must be avoided if the sensor is used under back-biased  
conditions. This piezo sensitivity of the sensor IC cannot  
be completely compensated for by the switching offset  
compensation technique.  
All sensors fulfill the electrical and magnetic characteris-  
tics when operated within the Recommended Operating  
Conditions (see page 13).  
Supply Voltage Below 4.5 V  
Typically, the sensors operate with supply voltages  
above 3 V, however, below 4.5 V some characteristics  
may be outside the specification.  
In order to assure switching the sensor on and off in a  
back-biased application, the minimum magnetic modu-  
lation of the differential field should amount to more than  
10% of the magnetic preinduction.  
Note: The functionality of the sensor below 4.5 V is not  
tested on a regular base. For special test condi-  
tions, please contact Micronas.  
If the HAL320 sensor IC is used in back-biased applica-  
tions, please contact our Application Department. They  
will provide assistance in avoiding applications which  
may induce stress to the ICs. This stress may cause  
drifts of the magnetic parameters indicated in this data  
sheet.  
4.3. Start-up Behavior  
Due to the active offset compensation, the sensors have  
an initialization time (enable time t  
the supply voltage. The parameter t  
) after applying  
en(O)  
4.1. Ambient Temperature  
is specified in  
en(O)  
the Electrical Characteristics (see page 13).  
Due to the internal power dissipation, the temperature  
on the silicon chip (junction temperature T ) is higher  
thanthetemperatureoutsidethepackage(ambienttem-  
J
During the initialization time, the output state is not de-  
fined and the output can toggle. After t , the output  
en(O)  
perature T ).  
A
will be low if the applied magnetic field B is above B  
.
ON  
The output will be high if B is below B  
.
OFF  
T = T + ΔT  
J
A
For magnetic fields between B  
state of the HAL sensor after applying V will be either  
low or high. In order to achieve a well-defined output  
state, the applied magnetic field must be above B  
and B , the output  
ON  
OFF  
Under static conditions and continuous operation, the  
following equation applies:  
DD  
ΔT = I * V * R  
DD  
DD  
th  
,
ONmax  
respectively, below B  
.
OFFmin  
For typical values, use the typical parameters. For worst  
case calculation, use the max. parameters for I and  
DD  
R , and the max. value for V from the application.  
th  
DD  
For all sensors, the junction temperature range T is  
J
specified. The maximum ambient temperature T  
can be calculated as:  
Amax  
T
Amax  
= T  
ΔT  
Jmax  
20  
Micronas  
 复制成功!