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HAL320 参数 Datasheet PDF下载

HAL320图片预览
型号: HAL320
PDF下载: 下载PDF文件 查看货源
内容描述: 差分霍尔效应传感器IC [Differential Hall-Effect Sensor IC]
分类和应用: 传感器
文件页数/大小: 22 页 / 1522 K
品牌: MICRONAS [ MICRONAS ]
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DATA SHEET  
HAL320  
3.5. Recommended Operating Conditions  
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specifi-  
cation is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.  
All voltages listed are referenced to ground (GND).  
Symbol  
Parameter  
Pin No.  
Min.  
4.5  
Max.  
24  
Unit  
V
V
DD  
Supply Voltage  
1
3
3
I
O
Continuous Output On Current  
Output Voltage  
20  
mA  
V
V
O
24  
3.6. Characteristics at T = –40 °C to +170 °C , V = 4.5 V to 24 V, GND = 0 V  
J
DD  
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.  
Typical Characteristics for T = 25 °C and V = 12 V  
J
DD  
Symbol  
Parameter  
Pin No.  
Min.  
2.8  
Typ.  
4.7  
Max.  
6.8  
Unit  
mA  
mA  
Conditions  
T = 25 °C  
I
I
Supply Current  
1
1
DD  
DD  
J
Supply Current over  
Temperature Range  
1.8  
4.7  
7.5  
V
V
V
Overvoltage Protection  
at Supply  
1
3
3
3
3
28.5  
28  
32.5  
32.5  
400  
10  
V
I
= 25 mA, T = 25 °C,  
DDZ  
DD J  
t = 20 ms  
OvervoltageProtectionatOutput  
V
I
O
= 25 mA, T = 25 °C,  
OZ  
J
t = 20 ms  
Output Voltage over  
Temperature Range  
180  
0.06  
62  
mV  
μA  
kHz  
μs  
I
O
= 20 mA  
OL  
I
f
t
Output Leakage Current over  
Temperature Range  
V
= 4.5 V...24 V,  
OH  
OH  
DB < DB  
, T 150 °C  
J
OFF  
Internal Oscillator  
Chopper Frequency  
osc  
Enable Time of Output  
35  
V
= 12 V,  
en(O)  
DD  
after Setting of V  
DB > DB + 2mT or  
DD  
ON  
DB < DB  
– 2mT  
OFF  
t
t
Output Rise Time  
Output Fall Time  
3
3
80  
400  
400  
200  
ns  
V
= 12 V, RL = 820 Ω,  
r
DD  
CL = 20 pF  
V = 12 V, RL = 820 Ω,  
DD  
45  
ns  
f
CL = 20 pF  
R
case  
SOT89B-2  
Thermal Resistance Junction to  
Substrate Backside  
150  
K/W  
Fiberglass Substrate  
30 mm x 10 mm x 1.5 mm  
(see Fig. 3–6)  
thJSB  
R
Thermal Resistance  
150  
200  
K/W  
thJS  
case  
Junction to Soldering Point  
TO92UA-3,  
TO92UA-4  
Micronas  
13