DATA SHEET
HAL320
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specifi-
cation is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
4.5
–
Max.
24
Unit
V
V
DD
Supply Voltage
1
3
3
I
O
Continuous Output On Current
Output Voltage
20
mA
V
V
O
–
24
3.6. Characteristics at T = –40 °C to +170 °C , V = 4.5 V to 24 V, GND = 0 V
J
DD
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T = 25 °C and V = 12 V
J
DD
Symbol
Parameter
Pin No.
Min.
2.8
Typ.
4.7
Max.
6.8
Unit
mA
mA
Conditions
T = 25 °C
I
I
Supply Current
1
1
DD
DD
J
Supply Current over
Temperature Range
1.8
4.7
7.5
V
V
V
Overvoltage Protection
at Supply
1
3
3
3
–
3
–
–
–
–
–
–
28.5
28
32.5
32.5
400
10
V
I
= 25 mA, T = 25 °C,
DDZ
DD J
t = 20 ms
OvervoltageProtectionatOutput
V
I
O
= 25 mA, T = 25 °C,
OZ
J
t = 20 ms
Output Voltage over
Temperature Range
180
0.06
62
mV
μA
kHz
μs
I
O
= 20 mA
OL
I
f
t
Output Leakage Current over
Temperature Range
V
= 4.5 V...24 V,
OH
OH
DB < DB
, T ≤ 150 °C
J
OFF
Internal Oscillator
Chopper Frequency
–
osc
Enable Time of Output
35
–
V
= 12 V,
en(O)
DD
after Setting of V
DB > DB + 2mT or
DD
ON
DB < DB
– 2mT
OFF
t
t
Output Rise Time
Output Fall Time
3
3
–
–
–
80
400
400
200
ns
V
= 12 V, RL = 820 Ω,
r
DD
CL = 20 pF
V = 12 V, RL = 820 Ω,
DD
45
ns
f
CL = 20 pF
R
case
SOT89B-2
Thermal Resistance Junction to
Substrate Backside
150
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm
(see Fig. 3–6)
thJSB
R
Thermal Resistance
–
150
200
K/W
thJS
case
Junction to Soldering Point
TO92UA-3,
TO92UA-4
Micronas
13
MICRONAS [ MICRONAS ]
