128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Electrical Specifications – Program/Erase Characteristics
Electrical Specifications – Program/Erase Characteristics
Table 42: Program/Erase Characteristics
Note 1 applies to all
VPPL or VPPH
Typ
Parameter
Symbol
Min
Max
Units
Notes
Word Programming
Program time Single word (first word)
Single word (subsequent word)
Buffered Programming
Program time Single word
tPROG/W
–
115
50
230
230
µs
2
tPROG/W
tPROG/PB
–
–
250
500
4.3
µs
One buffer (512 words) 90nm
2.15
ms
(128–
512Mb)
65nm
(128–
1024Mb)
1.02
0.57
2.05
1.14
45nm
(128–
1024Mb)
Buffer Enhanced Factory Programming (BEFP)
Program
Single word
90nm
(128–
512Mb)
tBEFP/W
–
4.2
2.0
0.93
–
–
µs
3
65nm
(128–
1024Mb)
45nm
(128–
1024Mb)
BEFP setup
Erasing and Suspending
tBEFP/
SETUP
5
–
µs
3
Erase time
128K-word parameter
tERS/MAB
tSUSP/P
tSUSP/E
–
–
–
0.9
20
20
4
s
Suspend la-
tency
Program suspend
Erase suspend
30
30
µs
µs
Blank Check
Main array
block
Main array block
tBC/MB
–
3.2
–
ms
1. Typical values measured at TC = 25°C and nominal voltages. Performance numbers are
valid for all speed versions. Excludes overhead. Sampled, but not 100% tested.
Notes:
2. Conventional word programming: First and subsequent words refer to first word and
subsequent words in control mode programming region.
3. Averaged over the entire device. BEFP is not validated at VPPL
.
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
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