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PC28F00BP30EFA 参数 Datasheet PDF下载

PC28F00BP30EFA图片预览
型号: PC28F00BP30EFA
PDF下载: 下载PDF文件 查看货源
内容描述: Numonyx® Axcellâ ?? ¢ P30-65nm闪存 [Numonyx® Axcell™ P30-65nm Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 86 页 / 11765 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P30-65nm  
6.0  
Command Set  
6.1  
Device Command Codes  
The flash Command User Interface (CUI) provides control of all read, write, and erase  
operations. The on-chip WSM manages all block-erase and word-program algorithms.  
The flash device commands are written to the CUI to control all flash memory device  
operations. The CUI does not occupy an addressable memory location; it is the  
mechanism through which the flash device is controlled. Table 6 shows valid device  
command codes and descriptions.  
Table 6:  
Command Codes and Definitions (Sheet 1 of 2)  
Mode  
Code  
Device Mode  
Read Array  
Description  
0xFF  
Places the device in Read Array mode. Array data is output on DQ[15:0].  
Read Status  
Register  
Places the device in Read Status Register mode. The device enters this mode  
after a program or erase command is issued. SR data is output on DQ[7:0].  
0x70  
Read Device ID  
or Read  
Configuration  
Register (RCR)  
Places device in Read Device Identifier mode. Subsequent reads output  
manufacturer/device codes, Configuration Register data, Block Lock status,  
or OTP Register data on DQ[15:0].  
0x90  
Read  
Places the device in Read Query mode. Subsequent reads output Common  
Flash Interface (CFI) on DQ[7:0].  
0x98  
0x50  
Read CFI  
Clear Status  
Register  
The WSM can only set SR error bits. The Clear Status Register command is  
used to clear the SR error bits.  
First cycle of a 2-cycle programming command; prepares the CUI for a write  
operation. On the next write cycle, the address and data are latched and the  
WSM executes the programming algorithm at the addressed location. During  
program operations, the device responds only to Read Status Register and  
Program Suspend commands. CE# or OE# must be toggled to update the  
Status Register in asynchronous read. CE# or ADV# must be toggled to  
update the SR Data for synchronous Non-array reads. The Read Array  
command must be issued to read array data after programming has finished.  
Word Program  
Setup  
0x40  
This command loads a variable number of words up to the buffer size of 512  
words into the program buffer.  
0xE8  
0xD0  
Buffered Program  
Write  
The confirm command is issued after the data streaming for writing into the  
buffer is done. This instructs the WSM to perform the Buffered Program  
algorithm, writing the data from the buffer to the flash memory array.  
Buffered Program  
Confirm  
First cycle of a 2-cycle command; initiates the BEFP mode. The CUI then  
waits for the BEFP Confirm command, 0xD0, that initiates the BEFP  
algorithm. All other commands are ignored when BEFP mode begins.  
0x80  
0xD0  
BEFP Setup  
If the previous command was BEFP Setup (0x80), the CUI latches the  
address and data, and prepares the device for BEFP mode.  
BEFP Confirm  
First cycle of a 2-cycle command; prepares the CUI for a block-erase  
operation. The WSM performs the erase algorithm on the block addressed by  
the Erase Confirm command. If the next command is not the Erase Confirm  
(0xD0) command, the CUI sets Status Register bits SR [5,4], and places the  
device in Read Status Register mode.  
0x20  
0xD0  
Block Erase Setup  
Erase  
If the first command was Block Erase Setup (0x20), the CUI latches the  
address and data, and the WSM erases the addressed block. During block-  
erase operations, the device responds only to Read Status Register and Erase  
Suspend commands. CE# or OE# must be toggled to update the Status  
Register in asynchronous read. CE# or ADV# must be toggled to update the  
SR Data for synchronous Non-array reads.  
Block Erase Confirm  
Datasheet  
19  
Sept 2012  
OrderNumber:208042-06  
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