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PC28F00AP30TF 参数 Datasheet PDF下载

PC28F00AP30TF图片预览
型号: PC28F00AP30TF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm  
Virtual Chip Enable Description  
Virtual Chip Enable Description  
The 2Gb device employs a virtual chip enable feature, which combines two 1Gb die  
with a common chip enable, CE# for Easy BGA packages. The maximum address bit is  
then used to select between the die pair with CE# asserted. When CE# is asserted and  
the maximum address bit is LOW, the lower parameter die is selected; when CE# is as-  
serted and the maximum address bit is HIGH, the upper parameter die is selected.  
Table 3: Virtual Chip Enable Truth Table for Easy BGA Packages  
Die Selected  
CE#  
A[MAX]  
Lower parameter die  
Upper parameter die  
L
L
L
H
Figure 1: Easy BGA Block Diagram  
Easy BGA (Dual Die) Top/Bottom  
Parameter Configuration  
Top Parameter Die  
CE#  
WP#  
OE#  
RST#  
V
CC  
V
WE#  
CLK  
PP  
V
CCQ  
Bottom Parameter Die  
V
ADV#  
SS  
DQ[15:0]  
WAIT  
A[MAX:1]  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.