512Mb, Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB Sector Erase
N25Q512A
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by five nonvolatile bits (BP0, BP1, BP2,
BP3, and TB)
Features
• Stacked device (two 256Mb die)
• SPI-compatible serial bus interface
• Double transfer rate (DTR) mode
• 2.7–3.6V single supply voltage
• 108 MHz (MAX) clock frequency supported for all
protocols in single transfer rate (STR) mode
• 54 MHz (MAX) clock frequency supported for all
protocols in DTR mode
• Dual/quad I/O instruction provides increased
throughput up to 54 MB/s
• Supported protocols
– Extended SPI, dual I/O, and quad I/O
– DTR mode supported on all
• Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
• PROGRAM/ERASE SUSPEND operations
• Available protocols
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard 2-byte signature (BA20h)
– Unique ID code (UID): 17 read-only bytes,
including: Two additional extended device ID
bytes to identify device factory options; and cus-
tomized factory data (14 bytes)
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages – JEDEC-standard, all RoHS-compliant
– V-PDFN-8/8mm x 6mm (also known as SON,
DFPN, MLP, MLF)
– SOP2-16/300mils (also known as SO16W, SO16-
Wide, SOIC-16)
– T-PBGA-24b05/6mm x 8mm (also known as
TBGA24)
– Available READ operations
– Quad or dual output fast read
– Quad or dual I/O fast read
• Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
1. Part numbers: N25Q512A83G1240X,
N25Q512A83GSF40X
Note:
• Software reset
• Additional reset pin for selected part numbers 1
• 3-byte and 4-byte addressability mode supported
• 64-byte, user-lockable, one-time programmable
(OTP) dedicated area
• Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Single die erase
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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