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MT48LC4M16A2P-75G 参数 Datasheet PDF下载

MT48LC4M16A2P-75G图片预览
型号: MT48LC4M16A2P-75G
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM MT48LC16M4A2 â ????梅格4 ×4× 4银行MT48LC8M8A2 â ???? 2梅格×8× 4银行MT48LC4M16A2 â ???? 1梅格×16× 4银行 [SDR SDRAM MT48LC16M4A2 – 4 Meg x 4 x 4 Banks MT48LC8M8A2 – 2 Meg x 8 x 4 Banks MT48LC4M16A2 – 1 Meg x 16 x 4 Banks]
分类和应用: 动态存储器
文件页数/大小: 83 页 / 3595 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第62页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第63页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第64页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第65页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第67页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第68页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第69页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第70页  
64Mb: x4, x8, x16 SDRAM  
PRECHARGE Operation  
Figure 37: READ With Auto Precharge Interrupted by a WRITE  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CLK  
READ - AP  
Bank n  
WRITE - AP  
Bank m  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Command  
Bank n  
Page  
active  
READ with burst of 4  
Page active  
Interrupt burst, precharge  
t
Idle  
Internal  
States  
t
RP - bank  
n
WR - bankm  
Write-back  
WRITE with burst of 4  
Bank m  
Address  
Bank n,  
Col a  
Bank m,  
Col d  
1
DQM  
D
D
D
D
D
IN  
OUT  
IN  
IN  
IN  
DQ  
CL = 3 (bank n)  
Transitioning data  
Don’t Care  
1. DQM is HIGH at T2 to prevent DOUTa + 1 from contending with DINd at T4.  
Note:  
PDF: 09005aef80725c0b  
64mb_x4x8x16_sdram.pdf - Rev. U 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 1999 Micron Technology, Inc. All rights reserved.  
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