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MT48LC16M8A2FC-8ELIT 参数 Datasheet PDF下载

MT48LC16M8A2FC-8ELIT图片预览
型号: MT48LC16M8A2FC-8ELIT
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 59 页 / 1835 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb: x4, x8, x16  
SDRAM  
Burst Type  
Accesses within a given burst may be programmed to  
be either sequential or interleaved; this is referred to as  
the burst type and is selected via bit M3.  
The ordering of accesses within a burst is determined  
by the burst length, the burst type and the starting col-  
umn address, as shown in Table 1.  
Table 1  
Burst Definition  
Burst  
Length  
Starting Column Order of Accesses Within a Burst  
Address  
Type = Sequential Type = Interleaved  
A0  
0
1
0-1  
1-0  
0-1  
1-0  
2
4
A1 A0  
A11  
A8  
A6 A5 A4  
A1  
Address Bus  
A10  
A7  
A3 A2  
A0  
A9  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
11  
9
8
6
5
4
1
10  
7
3
2
0
Mode Register (Mx)  
Reserved* WB Op Mode CAS Latency  
BT  
Burst Length  
A2 A1 A0  
*Should program  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
Cn, Cn + 1, Cn + 2  
Cn + 3, Cn + 4...  
Cn - 1,  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
M11, M10 = 0, 0”  
to ensure compatibility  
with future devices.  
Burst Length  
M2 M1 M0  
M3 = 0  
M3 = 1  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
4
8
1
2
8
4
8
Reserved  
Reserved  
Reserved  
Full Page  
Reserved  
Reserved  
Reserved  
Reserved  
Full  
Page  
(y)  
n = A0-A11/9/8  
(location 0-y)  
Not Supported  
Cn…  
Burst Type  
M3  
0
Sequential  
Interleaved  
NOTE: 1. For full-page accesses: y = 2,048 (x4), y = 1,024  
(x8), y = 512 (x16).  
1
2. For a burst length of two, A1-A9, A11 (x4), A1-A9  
(x8) or A1-A8 (x16) select the block-of-two burst;  
A0 selects the starting column within the block.  
3. For a burst length of four, A2-A9, A11 (x4), A2-A9  
(x8) or A2-A8 (x16) select the block-of-four burst;  
A0-A1 select the starting column within the block.  
4. For a burst length of eight, A3-A9, A11 (x4), A3-  
A9 (x8) or A3-A8 (x16) select the block-of-eight  
burst; A0-A2 select the starting column within the  
block.  
CAS Latency  
M6 M5 M4  
Reserved  
Reserved  
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
3
Reserved  
Reserved  
Reserved  
Reserved  
5. For a full-page burst, the full row is selected and  
A0-A9, A11 (x4), A0-A9 (x8) or A0-A8 (x16) select  
the starting column.  
6. Whenever a boundary of the block is reached  
within a given sequence above, the following  
access wraps within the block.  
7. For a burst length of one, A0-A9, A11 (x4), A0-A9  
(x8) or A0-A8 (x16) select the unique column to be  
accessed, and mode register bit M3 is ignored.  
M8  
0
M7  
0
M6-M0  
Defined  
-
Operating Mode  
Standard Operation  
All other states reserved  
-
-
Write Burst Mode  
M9  
0
Programmed Burst Length  
Single Location Access  
1
Figure 1  
Mode Register Definition  
128Mb: x4, x8, x16 SDRAM  
128MSDRAM_E.p65 Rev. E; Pub. 1/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2001, Micron Technology, Inc.  
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