128Mb: x4, x8, x16
SDRAM
CAPACITANCE
(Note: 2; notes appear on page 36)
PARAMETER - TSOP “TG” Package
Input Capacitance: CLK
SYMBOL
CI1
MIN
2.5
MAX UNITS NOTES
3.5
3.8
6.0
pF
pF
pF
29
30
31
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
CI2
2.5
CIO
4.0
PARAMETER - FBGA “FB” Package
Input Capacitance: CLK
SYMBOL
CI1
MIN
1.5
MAX UNITS NOTES
3.5
3.8
6.0
pF
pF
pF
34
35
36
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
CI2
1.5
CIO
3.0
ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS
(Notes: 5, 6, 8, 9, 11; notes appear on page 36)
AC CHARACTERISTICS
PARAMETER
Access time from CLK (pos. edge)
-7E
-75
MAX
-8E
MIN
SYMBOL MIN
MAX
5.4
MIN
MAX
6
6
UNITS NOTES
t
CL = 3
CL = 2
AC(3)
5.4
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
–
27
t
AC(2)
5.4
t
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
AH
0.8
1.5
2.5
2.5
7
0.8
1.5
2.5
2.5
7.5
10
1
2
t
AS
CH
t
3
t
CL
3
t
t
CL = 3
CL = 2
CK(3)
CK(2)
8
23
23
7.5
0.8
1.5
0.8
1.5
0.8
1.5
10
1
t
CKE hold time
CKH
0.8
1.5
0.8
1.5
0.8
1.5
t
CKE setup time
CKS
2
t
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
CMH
1
t
CMS
2
t
DH
1
t
Data-in setup time
DS
2
t
t
Data-out high-impedance time
CL = 3
CL = 2
HZ(3)
HZ(2)
5.4
5.4
5.4
6
6
6
10
10
t
Data-out low-impedance time
Data-out hold time (load)
LZ
1
3
1
3
1
3
t
OH
t
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
OH
1.8
37
60
15
1.8
44
66
20
1.8
50
70
20
28
N
t
RAS
120,000
64
120,000
64
120,000
64
t
RC
t
RCD
t
REF
t
RFC
66
15
14
0.3
66
20
15
0.3
70
20
20
0.3
t
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
RP
t
RRD
t
T
1.2
1.2
1.2
7
t
WRITE recovery time
WR 1 CLK +
7ns
1 CLK +
7.5ns
1 CLK +
7ns
24
14
15
75
15
80
ns
ns
25
20
t
Exit SELF REFRESH to ACTIVE command
XSR
67
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65 – Rev. E; Pub. 1/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
34
MICRON [ MICRON TECHNOLOGY ]
