欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT47H256M4HW-25IT 参数 Datasheet PDF下载

MT47H256M4HW-25IT图片预览
型号: MT47H256M4HW-25IT
PDF下载: 下载PDF文件 查看货源
内容描述: DDR2 SDRAM [DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 131 页 / 9265 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT47H256M4HW-25IT的Datasheet PDF文件第14页浏览型号MT47H256M4HW-25IT的Datasheet PDF文件第15页浏览型号MT47H256M4HW-25IT的Datasheet PDF文件第16页浏览型号MT47H256M4HW-25IT的Datasheet PDF文件第17页浏览型号MT47H256M4HW-25IT的Datasheet PDF文件第19页浏览型号MT47H256M4HW-25IT的Datasheet PDF文件第20页浏览型号MT47H256M4HW-25IT的Datasheet PDF文件第21页浏览型号MT47H256M4HW-25IT的Datasheet PDF文件第22页  
1Gb: x4, x8, x16 DDR2 SDRAM  
Ball Assignments and Descriptions  
Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions (Continued)  
Symbol  
Type  
Description  
DQS, DQS#  
I/O  
Data strobe: Output with read data, input with write data for source synchronous oper-  
ation. Edge-aligned with read data, center-aligned with write data. DQS# is only used  
when differential data strobe mode is enabled via the LOAD MODE command.  
LDQS, LDQS#  
UDQS, UDQS#  
RDQS, RDQS#  
I/O  
I/O  
Data strobe for lower byte: Output with read data, input with write data for source  
synchronous operation. Edge-aligned with read data, center-aligned with write data.  
LDQS# is only used when differential data strobe mode is enabled via the LOAD MODE  
command.  
Data strobe for upper byte: Output with read data, input with write data for source  
synchronous operation. Edge-aligned with read data, center-aligned with write data.  
UDQS# is only used when differential data strobe mode is enabled via the LOAD MODE  
command.  
Output  
Redundant data strobe: For x8 only. RDQS is enabled/disabled via the LOAD MODE com-  
mand to the extended mode register (EMR). When RDQS is enabled, RDQS is output with  
read data only and is ignored during write data. When RDQS is disabled, ball B3 becomes  
data mask (see DM ball). RDQS# is only used when RDQS is enabled and differential data  
strobe mode is enabled.  
VDD  
VDDQ  
VDDL  
VREF  
VSS  
Supply  
Supply  
Supply  
Supply  
Supply  
Supply  
Supply  
Power supply: 1.8V ±0.1V.  
DQ power supply: 1.8V ±0.1V. Isolated on the device for improved noise immunity.  
DLL power supply: 1.8V ±0.1V.  
SSTL_18 reference voltage (VDDQ/2).  
Ground.  
VSSDL  
VSSQ  
NC  
DLL ground: Isolated on the device from VSS and VSSQ.  
DQ ground: Isolated on the device for improved noise immunity.  
No connect: These balls should be left unconnected.  
NF  
No function: x8: these balls are used as DQ[7:4]; x4: they are no function.  
NU  
Not used: For x16 only. If EMR(E10) = 0, A8 and E8 are UDQS# and LDQS#. If EMR(E10) =  
1, then A8 and E8 are not used.  
NU  
Not used: For x8 only. If EMR(E10) = 0, A2 and E8 are RDQS# and DQS#. If EMR(E10) = 1,  
then A2 and E8 are not used.  
RFU  
Reserved for future use: Row address bits A13 (x16 only), A14, and A15.  
PDF: 09005aef821ae8bf  
1GbDDR2.pdf – Rev. T 02/10 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
18  
© 2004 Micron Technology, Inc. All rights reserved.  
 复制成功!