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MT250QL01GABA8ESF0AITES 参数 Datasheet PDF下载

MT250QL01GABA8ESF0AITES图片预览
型号: MT250QL01GABA8ESF0AITES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
Initial Delivery Status  
Power Loss Recovery  
For power loss recovery, the second part of the sequence is exiting from dual- or quad-  
SPI protocol by using the following FFh sequence: DQ0 and DQ3 equal to 1 for 8 clock  
cycles within S# LOW; S# becomes HIGH before 9th clock cycle. After this two-part se-  
quence the extended-SPI protocol is active.  
Interface Rescue  
For interface rescue, the second part of the sequence is for exiting from dual or quad-  
SPI protocol by using the following FFh sequence: DQ0 and DQ3 equal to 1 for 16 clock  
cycles within S# LOW; S# becomes HIGH before 17th clock cycle. For DTR protocol, 1  
should be driven on both edges of clock for 16 cycles with S# LOW. After this two-part  
sequence, the extended-SPI protocol is active.  
Initial Delivery Status  
The device is delivered as follows:  
• Memory array erased: all bits are set to 1 (each byte contains FFh)  
• Status register contains 00h (all status register bits are 0)  
• Nonvolatile configuration register (NVCR) bits all erased (FFFFh)  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2014 Micron Technology, Inc. All rights reserved.  
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