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MT250QL01GABA8ESF0AITES 参数 Datasheet PDF下载

MT250QL01GABA8ESF0AITES图片预览
型号: MT250QL01GABA8ESF0AITES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
SUSPEND/RESUME Operations  
Table 31: SUSPEND/RESUME Operations (Continued)  
Operation Name  
Description/Conditions  
PROGRAM RESUME (7Ah)  
ERASE RESUME (7Ah)  
The status register write in progress bit is set to 1 and the flag status register program  
erase controller bit is set to 0. The command is ignored if the device is not in a suspen-  
ded state.  
When the operation is in progress, the program or erase controller bit of the flag status  
register is set to 0. The flag status register can be polled for the operation status. When  
the operation completes, that bit is cleared to 1.  
1. See the Operations Allowed/Disallowed During Device States table.  
Note:  
Figure 42: PROGRAM/ERASE SUSPEND and RESUME Timing  
Extended  
0
7
C
LSB  
DQ0  
Command  
0
MSB  
MSB  
Dual  
3
C
LSB  
DQ[1:0]  
Command  
0
Quad  
1
C
LSB  
DQ[3:0]  
Command  
MSB  
1. S# not shown.  
Note:  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2014 Micron Technology, Inc. All rights reserved.  
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