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MT250QL01GABA3EW70AITES 参数 Datasheet PDF下载

MT250QL01GABA3EW70AITES图片预览
型号: MT250QL01GABA3EW70AITES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
Volatile Configuration Register  
Table 11: Clock Frequencies – DTR (in MHz)  
Notes apply to entire table  
Number of  
Dummy  
Clock Cycles  
DUAL OUTPUT  
FAST READ  
DUAL I/O FAST  
READ  
QUAD OUTPUT  
FAST READ  
QUAD I/O FAST  
READ  
FAST READ  
1
59  
73  
82  
90  
90  
90  
90  
90  
90  
90  
45  
59  
68  
76  
83  
90  
90  
90  
90  
90  
40  
49  
59  
65  
75  
83  
90  
90  
90  
90  
26  
40  
59  
65  
75  
83  
90  
90  
90  
90  
20  
30  
39  
49  
58  
68  
78  
85  
90  
90  
2
3
4
5
6
7
8
9
10 : 14  
1. Values are guaranteed by characterization and not 100% tested in production.  
Notes:  
2. A tuning data pattern (TDP) capability provides applications with data patterns for ad-  
justing the data latching point at the host end when the clock frequency is set higher  
than 133 MHz in STR mode and higher than 66 MHz in double transfer rate (DTR) mode.  
For additional details, refer to TN-25-07: Tuning Data Pattern for MT25Q and MT25T De-  
vices.  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
32  
© 2014 Micron Technology, Inc. All rights reserved.  
 
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