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MT250QL02GABB1E120SATES 参数 Datasheet PDF下载

MT250QL02GABB1E120SATES图片预览
型号: MT250QL02GABB1E120SATES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
Device ID Data  
Device ID Data  
The device ID data shown in the tables here is read by the READ ID and MULTIPLE I/O  
READ ID operations.  
Table 17: Device ID Data  
Byte#  
Manufacturer ID (1 byte total)  
Manufacturer ID (1 byte)  
Device ID (2 bytes total)  
Name  
Content Value  
Assigned By  
JEDEC  
1
20h  
2
Memory type (1 byte)  
BAh = 3V  
Manufacturer  
BBh = 1.8V  
22h = 2Gb  
3
Memory capacity (1 byte)  
21h = 1Gb  
20h = 512Mb  
19h = 256Mb  
18h = 128Mb  
17h = 64Mb  
Unique ID (17 bytes total)  
4
Indicates the number of remaining ID bytes  
10h  
Factory  
(1 byte)  
5
6
Extended device ID (1 byte)  
Device configuration information (1 byte)  
Customized factory data (14 bytes)  
See Extended Device ID table  
00h = Standard  
7:20  
Unique ID code (UID)  
Table 18: Extended Device ID Data, First Byte  
Bit 7  
Bit 6  
Bit 51  
Bit 4  
Reserved  
Bit 3  
Bit 22  
Bit 1  
Bit 0  
Reserved  
Device  
Generation  
1 = 2nd  
1 = Alternate BP  
scheme  
0 = Standard BP  
scheme  
HOLD#/RESET#:  
0 = HOLD  
Additional HW  
RESET#:  
1 = Available  
0 = Not available  
Sector size:  
00 = Uniform  
64KB  
1 = RESET  
generation  
1. For alternate BP scheme information, contact the factory.  
Notes:  
2. Available for specific part numbers. See Part Number Ordering Information for details.  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
37  
© 2014 Micron Technology, Inc. All rights reserved.  
 
 
 
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